The VB408, VB408B, VB408FI are fully protected positive adjustable voltage regulators made using a proprietary High Voltage VIPower™ technology. The device can be connected to a D.C. source (up to 400V) or in off-line application directly to the rectified main (110V/ 230V). It is particularly suitable to be used in the manufacture of DC/DC converters, AC/DC .
m 1.25V to VIN-30V providing an internally limited output current; it has built in short circuit and thermal shutdown protections. The device does not provide galvanic insulation from main. BLOCK DIAGRAM V IN Power Stage BIAS CIRCUIT CURRENT SENSE V OUT Current Limitation + _ Thermal RE F 3 REF 2 + _ Protection C ontrol Signal + _ RE F 1 AD J FC00410 September 1999 1/8 1 VB408 / VB408B / VB408FI ABSOLUTE MAXIMUM RATING Symbol Parameter Input to Output Voltage at 20 mA Output current Electrostatic discharge (R=1.5kΩ, C=100pF) Power dissipation at TC=25oC Junction operating temp.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | VB408 |
STMicroelectronics |
HIGH VOLTAGE LINEAR REGULATOR POWER I.C. | |
2 | VB408B |
STMicroelectronics |
HIGH VOLTAGE LINEAR REGULATOR POWER I.C. | |
3 | VB40100C |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
4 | VB40100C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
5 | VB40100C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
6 | VB40100G |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
7 | VB40100G-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
8 | VB40120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
9 | VB40150C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
10 | VB40150C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier | |
11 | VB40170C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
12 | VB409 |
STMicroelectronics |
HIGH VOLTAGE REGULATOR POWER I.C. |