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VB10170C |
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| Part Number | VB10170C |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com VB10170C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A TMBS ® TO-263AB K 2 1 FEATURES • Trench MOS Schottk... |
| Features |
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 VB10170C PIN 1 K PIN 2 HEATSINK TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. 2x5A 170 V 80 A 0.65 V 175 °C MECHANICAL DATA Case: TO-263AB Molding comp... |
| Document |
 VB10170C Data Sheet
PDF 85.96KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | VB10170C-E3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 2 | VB10170C-M3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 3 | VB10170CHM3 |
Vishay |
Dual High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 4 | VB10150S |
Vishay |
High Voltage Trench MOS Barrier Schottky Rectifier |
|
| 5 | VB1205D-1W |
YUAN |
DC-DC CONVERTER |
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