www.vishay.com V60100C-M3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS ® TO-220AB V60100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JE.
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package
2 x 30 A 100 V 320 A 0.66 V 150 °C
TO-220AB
Diode variation
Common cathode
MECHANICAL DATA Case: TO-220AB.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | V60100C |
Vishay Siliconix |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
2 | V60100P |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | V60100PW |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
4 | V60120C |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
5 | V60170G-M3 |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
6 | V60170PW |
Vishay |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
7 | V600 |
Omron |
RFID System Applications | |
8 | V600-HA |
Omron |
Intelligent Flag I/II | |
9 | V600-HA |
Omron |
Intelligent Flag I | |
10 | V600-HAM81 |
Omron |
Intelligent Flag I/II | |
11 | V600-HAM81 |
Omron |
Intelligent Flag I/II | |
12 | V600-HAM81 |
Omron |
Intelligent Flag I |