V60100C - Vishay Siliconix

V60100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com V60100C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A TMBS ® TO-220AB V60100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD .

Features

• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 100 V IFSM 320 A VF at IF = 30 A TJ max. 0.66 V 150 °C Package TO-220AB Diode variation Common cathode MECHANICAL DATA Case: .