The UTC UTT3N10-H is an N-channel logic level enhancement mode field effect transistor, it uses UTC’s advanced technology to provide the customers with high switching speed and low gate charge. FEATURES * RDS(on) < 225mΩ @ VGS = 10V, ID = 1.25A RDS(on) < 360mΩ @ VGS = 4.5V, ID = 125A * High switching speed * Low grage SYMBOL Power MOSFET ORDERING INF.
* RDS(on) < 225mΩ @ VGS = 10V, ID = 1.25A RDS(on) < 360mΩ @ VGS = 4.5V, ID = 125A
* High switching speed
* Low grage
SYMBOL
Power MOSFET
ORDERING INFORMATION
Order Number
UTT3N10G-AA3-R Note: Pin Assignment: G: Gate D: Drain
S: Source
Package SOT-223
Pin Assignment 123 GDS
Packing Tape Reel
MARKING
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1 of 4
QW-R209-061.a
UTT3N10-H
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
+100
V
Gate-Source Voltage
VGS.
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---|---|---|---|---|
1 | UTT30N05 |
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2 | UTT30N06 |
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3 | UTT30N08 |
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4 | UTT30N10 |
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5 | UTT30N10 |
INCHANGE |
N-Channel MOSFET | |
6 | UTT30NP30 |
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DUAL POWER MOSFET | |
7 | UTT30P04 |
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P-CHANNEL POWER MOSFET | |
8 | UTT30P06 |
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P-CHANNEL POWER MOSFET | |
9 | UTT3205 |
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N-CHANNEL POWER MOSFET | |
10 | UTT36N05 |
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N-CHANNEL POWER MOSFET | |
11 | UTT36N10H |
UTC |
N-CHANNEL MOSFET | |
12 | UTT36P03 |
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P-CHANNEL POWER MOSFET |