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The UTC UTT3205 uses advanced technology to provide excellent RDS(ON), fast switching, low gate charge, and excellent efficiency. This device is suitable for all commercial-industrial applications at power dissipation levels to approximately 50 watts. FEATURES * RDS(ON)<8 mΩ @VGS=10V * Ultra Low Gate Charge ( 146nC max ) * Low Reverse Transfer Capacitance .
* RDS(ON)<8 mΩ @VGS=10V
* Ultra Low Gate Charge ( 146nC max )
* Low Reverse Transfer Capacitance ( CRSS = typ. 211 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
2.Drain
1
Power MOSFET
TO-220
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT3205L-TA3-T
UTT3205G-TA3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-220
Pin Assignment 123 GDS
Packing Tube
MARKING
www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-510.c
UTT3205
Prelim.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | UTT30N05 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 2 | UTT30N06 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 3 | UTT30N08 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 4 | UTT30N10 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 5 | UTT30N10 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | UTT30NP30 |
Unisonic Technologies |
DUAL POWER MOSFET |
|
| 7 | UTT30P04 |
Unisonic Technologies |
P-CHANNEL POWER MOSFET |
|
| 8 | UTT30P06 |
Unisonic Technologies |
P-CHANNEL POWER MOSFET |
|
| 9 | UTT36N05 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 10 | UTT36N10H |
UTC |
N-CHANNEL MOSFET |
|
| 11 | UTT36P03 |
UTC |
P-CHANNEL POWER MOSFET |
|
| 12 | UTT3N10-H |
UTC |
N-CHANNEL MOSFET |
|