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UTT3N10-H |
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| Part Number | UTT3N10-H |
| Manufacturer | UTC |
| Description | The UTC UTT3N10-H is an N-channel logic level enhancement mode field effect transistor, it uses UTC’s advanced technology to provide the customers with high switching speed and low gate charge. FEAT... |
| Features |
* RDS(on) < 225mΩ @ VGS = 10V, ID = 1.25A RDS(on) < 360mΩ @ VGS = 4.5V, ID = 125A
* High switching speed * Low grage
SYMBOL Power MOSFET ORDERING INFORMATION Order Number UTT3N10G-AA3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 Pin Assignment 123 GDS Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R209-061.a UTT3N10-H Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS +100 V Gate-Source Voltage VGS... |
| Document |
 UTT3N10-H Data Sheet
PDF 173.99KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | UTT30N05 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 2 | UTT30N06 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 3 | UTT30N08 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 4 | UTT30N10 |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 5 | UTT30N10 |
INCHANGE |
N-Channel MOSFET |
|