UTC2SD882S - Unisonic Technologies

UTC2SD882S NPN EPITAXIAL SILICON TRANSISTOR

UTC 2SD882S NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SB772S APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C ,unless otherwise specified ) PARAMETERS.

Features

*High current output up to 3A
*Low saturation voltage
*Complement to 2SB772S APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C ,unless otherwise specified ) PARAMETERS Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation( Ta=25°C) Collector current(DC) Collector current(PULSE) Base current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Ic Ic IB Tj TSTG RATING 40 30 5 0.5 3 7 0.6 150 -55 ~ +150 UNIT V V V W A A A °C °C ELECTRICAL CHAR.