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Low frequency power amplifier applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Total Power Dissipation(Ta=25°C) Collector current Junction Temperature Storage Temperature Base Curr.
P MAX 100 100 1 1 300 UNIT V µA µA V V 0.7 60 20 9 MHZ CLASSIFICATION of hFE1 RANK RANGE O 60-120 Y 100-200 GR 150-300 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R203-014,A .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | UTC2SB772 |
Unisonic Technologies |
MEDIUM POWER LOW VOLTAGE TRANSISTOR |
|
| 2 | UTC2SB772S |
Unisonic Technologies |
MEDIUM POWER LOW VOLTAGE TRANSISTOR |
|
| 3 | UTC2SA1015 |
Unisonic Technologies |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 4 | UTC2SA1020 |
Unisonic Technologies |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 5 | UTC2SA684 |
Unisonic Technologies |
PNP EPITAXIAL PLANAR TRANSISTOR |
|
| 6 | UTC2SA733 |
Unisonic Technologies |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR |
|
| 7 | UTC2SA928A |
Unisonic Technologies |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 8 | UTC2SC1384 |
Unisonic Technologies |
NPN EPITAXIAL PLANAR TRANSISTOR |
|
| 9 | UTC2SC1815 |
Unisonic Technologies |
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR |
|
| 10 | UTC2SC2328A |
Unisonic Technologies |
AUDIO POWER AMPLIFIER |
|
| 11 | UTC2SC945 |
Unisonic Technologies |
NPN EPITAXIAL SILICON TRANSISTOR(AUDIO FREQUENCY AMPLIFIER) |
|
| 12 | UTC2SD468 |
Unisonic Technologies |
LOW FREQUENCY POWER AMPLIFIER |
|