UTC 2SC2328A NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER FEATURES *Collector Dissipation Pc=1 W *3 W Output Application *Complement of 2SA928A 1 TO-92NL 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dis.
*Collector Dissipation Pc=1 W
*3 W Output Application
*Complement of 2SA928A
1
TO-92NL
1: EMITTER
2: COLLECTOR
3: BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation Collector current Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO Pc Ic Tj TSTG
RATING
30 30 5 1 2 150 -55 ~ +150
UNIT
V V V W A °C °C
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UTC2SC1384 |
Unisonic Technologies |
NPN EPITAXIAL PLANAR TRANSISTOR | |
2 | UTC2SC1815 |
Unisonic Technologies |
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR | |
3 | UTC2SC945 |
Unisonic Technologies |
NPN EPITAXIAL SILICON TRANSISTOR(AUDIO FREQUENCY AMPLIFIER) | |
4 | UTC2SA1015 |
Unisonic Technologies |
PNP EPITAXIAL SILICON TRANSISTOR | |
5 | UTC2SA1020 |
Unisonic Technologies |
PNP EPITAXIAL SILICON TRANSISTOR | |
6 | UTC2SA684 |
Unisonic Technologies |
PNP EPITAXIAL PLANAR TRANSISTOR | |
7 | UTC2SA733 |
Unisonic Technologies |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR | |
8 | UTC2SA928A |
Unisonic Technologies |
PNP EPITAXIAL SILICON TRANSISTOR | |
9 | UTC2SB772 |
Unisonic Technologies |
MEDIUM POWER LOW VOLTAGE TRANSISTOR | |
10 | UTC2SB772S |
Unisonic Technologies |
MEDIUM POWER LOW VOLTAGE TRANSISTOR | |
11 | UTC2SB834 |
Unisonic Technologies |
HIGH VOLTAGE TRANSISTOR | |
12 | UTC2SD468 |
Unisonic Technologies |
LOW FREQUENCY POWER AMPLIFIER |