www.DataSheet4U.com SF5G48,SF5J48,USF5G48,USF5J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF5G48,SF5J48,USF5G48,USF5J48 MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 400, 600V Repetitive Peak Reverse Voltage : VRRM = 400, 600V l Average On−State Current l Gate Trigger Current SF5G48·SF5J48 : IT (AV) = 5A : IGT = 10mA Max. Un.
nt Peak Gate Power Dissipation Average Gate Power Dissition Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Strage Temperature Range (Note 1) 2 SYMBOL RATING 400 UNIT VDRM VRRM 600 V 500 VRSM 720 IT (AV) IT (RMS) ITSM I t di /dt PGM PG (AV) VFGM VRGM IGM Tj Tstg 2 V 5 7.8 80 (50Hz) 88 (60Hz) 32 100 5 0.5 10 −5 2 −40~125 −40~125 A A A A s A / µs W W V V A °C °C 2 Note 1: VDRM = 0.5 × Rated ITM ≤ 15A tgw ≥ 10µs tgr ≤ 250ns igp = IGT × 2.0 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current and Repe.
SF5G48,SF5J48,USF5G48,USF5J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF5G48,SF5J48,USF5G48,USF5J48 MEDIUM POWER CONTROL .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | USF5J49 |
Toshiba Semiconductor |
(USF5x49) THYRISTOR SILICON PLANAR TYPE | |
2 | USF5G48 |
Toshiba Semiconductor |
TOSHIBA THYRISTOR SILICON PLANAR TYPE | |
3 | USF5G48 |
Toshiba Semiconductor |
(USF5x48) THYRISTOR SILICON PLANAR TYPE | |
4 | USF5G49 |
Toshiba Semiconductor |
(USF5x49) THYRISTOR SILICON PLANAR TYPE | |
5 | USF0402 |
Schurter |
Fuses | |
6 | USF05G49 |
Toshiba Semiconductor |
LOW POWER SWITCHING&CONTROLLER | |
7 | USF0603 |
Schurter |
Fuses | |
8 | USF0J101MDD |
Nichicon |
ALUMINUM ELECTROLYTIC CAPACITORS | |
9 | USF0J151MDD |
Nichicon |
ALUMINUM ELECTROLYTIC CAPACITORS | |
10 | USF0J221MDD |
Nichicon |
ALUMINUM ELECTROLYTIC CAPACITORS | |
11 | USF0J330MDD |
Nichicon |
ALUMINUM ELECTROLYTIC CAPACITORS | |
12 | USF0J470MDD |
Nichicon |
ALUMINUM ELECTROLYTIC CAPACITORS |