USF05G49 - Toshiba Semiconductor

USF05G49 LOW POWER SWITCHING&CONTROLLER

www.DataSheet4U.com USF05G49 TOSHIBA THYRISTOR SILICON PLANAR TYPE USF05G49 LOW POWER SWITCHING AND CONTROL APPLICATIONS Repetitive Peak Off−State Voltage : VDRM = 400 V Repetitive Peak Reverse Voltage : VRRM = 400 V Average On−State Current : IT (AV) = 500 mA Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage and Repetitive Peak Re.

Features

−40~125 V mA mA A A s A / µs W W V V mA °C °C 2 JEDEC JEITA TOSHIBA ― ― 13-5B1A Weight: 0.2 g (typ.) Note: Should be used with gate resistance as shown below. Note 1: di / dt Test condition: iG = 5mA, tgw = 10µs, tgr≤250ns MARKING Part No. (or abbreviation code) P Lot No. A A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2004-07-06 www.DataSheet4U.com USF05G49 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current and Repetitive Peak Reverse Current Peak On−State Voltage Gate Trigger Voltage Gate Trigger Current Holding Current.