USF5G49 - Toshiba Semiconductor

USF5G49 (USF5x49) THYRISTOR SILICON PLANAR TYPE

www.DataSheet4U.com SF5G49,SF5J49,USF5G49,USF5J49 TOSHIBA Thyristor Silicon Planar Type SF5G49,SF5J49,USF5G49,USF5J49 Medium Power Control Applications · · · Repetitive peak off-state voltage: VDRM = 400, 600 V Repetitive peak reverse voltage: VRRM = 400, 600 V Average on-state current: IT (AV) = 5 A Gate trigger current: IGT = 70 µA max Unit: mm Maximum .

Features

GM IGM Tj Tstg 5 7.8 65 (50 Hz) 20 0.5 0.05 5 -5 200 -40~125 -40~125 A A A A2s W W V V mA °C °C V Unit VDRM VRRM JEDEC JEITA TOSHIBA ― ― 13-7F1A Weight: 0.36 g (typ.) Note: Should be used with gate resistance as follows: Anode Gate RGK < = 330 W Cathode JEDEC JEITA TOSHIBA ― ― 13-F2A Weight: 0.28 g (typ.) 1 2002-02-05 www.DataSheet4U.com SF5G49,SF5J49,USF5G49,USF5J49 Electrical Characteristics (Ta = 25°C) Characteristics Repetitive peak off-state current and Repetitive peak reverse current Peak on-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage .