UPA2735GR - Renesas

UPA2735GR P-channel MOSFET

The μ PA2735GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features • VDSS = −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 5.0 mΩ MAX. (VGS = −10 V, ID = −16 A) • 4.5 V Gate-drive available • Small and surface mount package (Power SOP8) • Pb-free and Halogen free P.

Features

• VDSS = −30 V (TA = 25°C)
• Low on-state resistance ⎯ RDS(on) = 5.0 mΩ MAX. (VGS = −10 V, ID = −16 A)
• 4.5 V Gate-drive available
• Small and surface mount package (Power SOP8)
• Pb-free and Halogen free Power SOP8 Ordering Information Part No. μ PA2735GR-E1-AT μ PA2735GR-E2-AT LEAD PLATING Pure Sn PACKING Tape 2500 p/reel Package Power SOP8 0.08 g TYP. Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation ∗2 Total Power Dissipation (PW = 10 sec) ∗2 Channel Te.