The µPA2730TP which has a heat spreader is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = –10 V, ID = –7.5 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = –4.5 V, ID = –7.5 A) RDS(on)3 = 12.0 mΩ MAX. (VGS = –4.0 V,.
• Low on-state resistance
RDS(on)1 = 7.0 mΩ MAX. (VGS =
–10 V, ID =
–7.5 A) RDS(on)2 = 10.5 mΩ MAX. (VGS =
–4.5 V, ID =
–7.5 A) RDS(on)3 = 12.0 mΩ MAX. (VGS =
–4.0 V, ID =
–7.5 A)
• Low Ciss: Ciss = 4670 pF TYP.
• Small and surface mount package (Power HSOP8)
ORDERING INFORMATION
PART NUMBER µPA2730TP
PACKAGE Power HSOP8
1.49 ±0.21 1.44 TYP.
0.05 ±0.05
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3
; Source
4 ; Gate
5, 6, 7, 8, 9 ; Drain
14
5.2
+0.17
–0.2
+0.10
–0.05
0.8 ±0.2 S
6.0 ±0.3 4.4 ±0.15
0.15
1.27 TYP.
0.40
+0.10
–0.05
14
0.12 M
1.1 ±0.2
2.9 MAX.
2.0 ±0.2 9
4.1 MAX.
8.
The µPA2730TP which has a heat spreader is P-Channel MOS Field Effect Transistor designed for power management applicati.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPA2731UT1A |
Renesas |
P-CHANNEL POWER MOSFET | |
2 | UPA2733GR |
NEC |
P-CHANNEL POWER MOSFET | |
3 | UPA2735GR |
Renesas |
P-channel MOSFET | |
4 | UPA2736GR |
Renesas |
P-channel MOSFET | |
5 | UPA2737GR |
Renesas |
P-channel MOSFET | |
6 | UPA2738GR |
Renesas |
P-channel MOSFET | |
7 | UPA2739T1A |
Renesas |
P-CHANNEL POWER MOSFET | |
8 | UPA2700GR |
NEC |
SWITCHING N- AND P-CHANNEL POWER MOS FET | |
9 | UPA2700TP |
NEC |
SWITCHING N- AND P-CHANNEL POWER MOS FET | |
10 | UPA2701GR |
NEC |
SWITCHING N- AND P-CHANNEL POWER MOS FET | |
11 | UPA2701TP |
NEC |
SWITCHING N- AND P-CHANNEL POWER MOS FET | |
12 | UPA2702GR |
NEC |
SWITCHING N- AND P-CHANNEL POWER MOS FET |