UPA2731UT1A - Renesas

UPA2731UT1A P-CHANNEL POWER MOSFET

The μ PA2731UT1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = −10 V, ID = −22 A) RDS(on)2 = 6.4 mΩ MAX. (VGS = −4.5 V, ID = −22 A) • Low Ciss: Ciss = 3620 pF TYP. • Small and surface mount packag.

Features

• Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = −10 V, ID = −22 A) RDS(on)2 = 6.4 mΩ MAX. (VGS = −4.5 V, ID = −22 A)
• Low Ciss: Ciss = 3620 pF TYP.
• Small and surface mount package (8pin HVSON) 0.42 +0.1 −0.05 1.27 0.10 M PACKAGE DRAWING (Unit: mm) 1 2 3 4 8 7 6 5 6 ±0.2 5.4 ±0.2 5 ±0.2 5.15 ±0.2 0.10 S 0.27 ±0.05 1.0 MAX. +0.05 −0 0 ORDERING INFORMATION PART NUMBER μ PA2731UT1A-E1-AZ Note μ PA2731UT1A-E2-AZ Note PACKAGE 8pin HVSON 8pin HVSON 4.1 ±0.2 1 0.2 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain Note Pb-free (This product does not contain Pb in external elect.