UPA2719GR - NEC

UPA2719GR SWITCHING N- AND P-CHANNEL POWER MOS FET

The µ PA2719GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = −10 V, ID = −5.0 A) RDS(on)2 = 20.9 mΩ MAX. (VGS = −4.5 V, ID = −5.0 A) • Low Ciss: Ciss = 2010 pF TYP. • Built-in gate protection diod.

Features

• Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = −10 V, ID = −5.0 A) RDS(on)2 = 20.9 mΩ MAX. (VGS = −4.5 V, ID = −5.0 A)
• Low Ciss: Ciss = 2010 pF TYP.
• Built-in gate protection diode
• Small and surface mount package (Power SOP8) 6.0 ±0.3 4.4 +0.10
  –0.05 1 1.44 4 5.37 MAX. 0.8 1.8 MAX. 0.15 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10
  –0.05 0.12 M µ PA2719GR ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drai.