UPA2713GR - NEC

UPA2713GR SWITCHING N- AND P-CHANNEL POWER MOS FET

The µPA2713GR is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain FEATURES • Low on-state resistance RDS(on)1 = 16 mΩ MAX. (VGS = −10 V, ID = −4.0 A) RDS(on)2 = 25 mΩ MAX. (VGS = −4.5 V, ID .

Features

• Low on-state resistance RDS(on)1 = 16 mΩ MAX. (VGS = −10 V, ID = −4.0 A) RDS(on)2 = 25 mΩ MAX. (VGS = −4.5 V, ID = −4.0 A) RDS(on)3 = 30 mΩ MAX. (VGS = −4.0 V, ID = −4.0 A)
• Low Ciss: Ciss = 1600 pF TYP.
• Small and surface mount package (Power SOP8) 1 4 5.37 MAX. +0.10
  –0.05 6.0 ±0.3 4.4 0.8 1.8 MAX. 1.44 0.15 0.05 MIN. 0.5 ±0.2 0.10 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 1.27 0.78 MAX. 0.40 +0.10
  –0.05 0.12 M µPA2713GR ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Cu.