The µ PA2718GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = −10 V, ID = −6.5 A) RDS(on)2 = 14.5 mΩ MAX. (VGS = −4.5 V, ID = −6.5 A) • Low Ciss: Ciss = 2810 pF TYP. • Built-in gate protection dio.
• Low on-state resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = −10 V, ID = −6.5 A) RDS(on)2 = 14.5 mΩ MAX. (VGS = −4.5 V, ID = −6.5 A)
• Low Ciss: Ciss = 2810 pF TYP.
• Built-in gate protection diode
• Small and surface mount package (Power SOP8)
6.0 ±0.3 4.4
+0.10
–0.05
1
1.44
4 5.37 MAX.
0.8
1.8 MAX.
0.15
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
0.05 MIN.
0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10
–0.05
0.12 M
µ PA2718GR
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Dra.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPA2710GR |
NEC |
SWITCHING N- AND P-CHANNEL POWER MOS FET | |
2 | UPA2711GR |
NEC |
SWITCHING N- AND P-CHANNEL POWER MOS FET | |
3 | UPA2712GR |
NEC |
SWITCHING N- AND P-CHANNEL POWER MOS FET | |
4 | UPA2713GR |
NEC |
SWITCHING N- AND P-CHANNEL POWER MOS FET | |
5 | UPA2714GR |
NEC |
SWITCHING N- AND P-CHANNEL POWER MOS FET | |
6 | UPA2716GR |
NEC |
SWITCHING N- AND P-CHANNEL POWER MOS FET | |
7 | UPA2717GR |
NEC |
SWITCHING N- AND P-CHANNEL POWER MOS FET | |
8 | UPA2719AGR |
Renesas |
P-CHANNEL POWER MOS FET | |
9 | UPA2719GR |
NEC |
SWITCHING N- AND P-CHANNEL POWER MOS FET | |
10 | UPA2700GR |
NEC |
SWITCHING N- AND P-CHANNEL POWER MOS FET | |
11 | UPA2700TP |
NEC |
SWITCHING N- AND P-CHANNEL POWER MOS FET | |
12 | UPA2701GR |
NEC |
SWITCHING N- AND P-CHANNEL POWER MOS FET |