TTA1452B - INCHANGE

TTA1452B PNP Transistor

·High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A ·Low collector-emitter saturation voltage: VCE(sat)≤ -0.4V@IC= -6A; IB= -300mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V.

Features

CE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -300mA VBE(sat) Base-Emitter Saturation Voltage IC= -6A; IB= -300mA ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -80V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -1V hFE-2 DC Current Gain IC= -6A; VCE= -1V TTA1452B MIN TYP MAX UNIT -80 V -0.4 V -1.2 V -5 μA -5 μA 120 240 40 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications.