·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@IC= -6A ·Good Linearity of hFE ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 .
Voltage IC= -6A; IB= -0.3A VBE(sat) Base-Emitter Saturation Voltage IC= -6A; IB= -0.3A ICBO Collector Cutoff Current VCB= -80V ; IE= 0 IEBO Emitter Cutoff Current VEB= -6V ; IC= 0 hFE-1 DC Current Gain IC= -1A ; VCE= -1V hFE-2 DC Current Gain IC= -6A ; VCE= -1V COB Output Capacitance IE= 0; VCB= -10V;ftest= 1MHz fT Current-Gain—Bandwidth Product IC= -1A; VCE= -5V Switching Times ton Turn-on Time tstg Storage Time tf Fall Time IC= -6A ,IB1= -IB2= -0.3A, VCC= -30V, RL= 5Ω hFE-1 Classifications O Y 70-140 120-240 TTA1452 MIN TYP. MAX UNIT -80 V -0.4 V -1.2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TTA1452B |
Toshiba |
Silicon PNP Transistor | |
2 | TTA1452B |
INCHANGE |
PNP Transistor | |
3 | TTA1586FU |
Toshiba Semiconductor |
Silicon PNP Transistor | |
4 | TTA1713 |
Toshiba |
Silicon PNP Transistor | |
5 | TTA1943 |
Toshiba |
Silicon PNP Transistor | |
6 | TTA1943 |
nELL |
Silicon PNP Transistor | |
7 | TTA1943 |
INCHANGE |
PNP Transistor | |
8 | TTA0001 |
INCHANGE |
PNP Transistor | |
9 | TTA0001 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
10 | TTA0002 |
INCHANGE |
PNP Transistor | |
11 | TTA0002 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
12 | TTA003 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors |