This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supp.
- 7.0A, 800V, RDS(on) = 1.9Ω@VGS = 10 V - Low gate charge ( typical 40nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Singl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSP7N60M |
Truesemi |
N-Channel MOSFET | |
2 | TSP7N60S |
Truesemi |
N-Channel MOSFET | |
3 | TSP7N65M |
Truesemi |
N-Channel MOSFET | |
4 | TSP70R1K1S1 |
Truesemi |
N-Channel MOSFET | |
5 | TSP70R210S1 |
Truesemi |
N-Channel MOSFET | |
6 | TSP70R340S1 |
Truesemi |
N-Channel MOSFET | |
7 | TSP70R450S1 |
Truesemi |
N-Channel MOSFET | |
8 | TSP730M |
Truesemi |
N-Channel MOSFET | |
9 | TSP740M |
Truesemi |
N-Channel MOSFET | |
10 | TSP75N75M |
Truesemi |
N-Channel MOSFET | |
11 | TSP058A |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
12 | TSP058B |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |