TSP730M - Truesemi

TSP730M N-Channel MOSFET

This Pow er MOSFET is produced using Tr uesemi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency sw itched mode pow.

Features

• 6.0A, 400V, RDS(on) = 1.00Ω @VGS = 10 V
• Low gate charge ( typical 18nC)
• Fast wsitching
• 100% avalanche tested
• Improved dv/dt capability {D GDS TO-220 GD S TO-220F
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● {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche En.