SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET .
• 650V @TJ = 150 ℃
• Typ. RDS(on) = 0.58Ω
• Ultra Low Gate Charge (typ. Qg = 9nC)
• 100% avalanche tested
• Rohs Compliant
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(N.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSP7N60M |
Truesemi |
N-Channel MOSFET | |
2 | TSP7N65M |
Truesemi |
N-Channel MOSFET | |
3 | TSP7N80M |
Truesemi |
N-Channel MOSFET | |
4 | TSP70R1K1S1 |
Truesemi |
N-Channel MOSFET | |
5 | TSP70R210S1 |
Truesemi |
N-Channel MOSFET | |
6 | TSP70R340S1 |
Truesemi |
N-Channel MOSFET | |
7 | TSP70R450S1 |
Truesemi |
N-Channel MOSFET | |
8 | TSP730M |
Truesemi |
N-Channel MOSFET | |
9 | TSP740M |
Truesemi |
N-Channel MOSFET | |
10 | TSP75N75M |
Truesemi |
N-Channel MOSFET | |
11 | TSP058A |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR | |
12 | TSP058B |
Pan Jit International Inc. |
BI-DIRECTIONAL THYRISTOR SURGE PROTECTOR |