This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power suppl.
• 9.5A,200V,Max.RDS(on)=0.40 Ω @ VGS =10V
• Low gate charge(typical 20nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TJ=25℃ unless otherwise specified
Symbol VDSS VGS
ID
IDM EAS EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current Pulsed Drain Current
TC = 25℃ TC = 100℃
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(N.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSP600-124 |
TRACO POWER |
Industrial Power Supplies | |
2 | TSP600-136 |
TRACO POWER |
Industrial Power Supplies | |
3 | TSP600-148 |
TRACO POWER |
Industrial Power Supplies | |
4 | TSP60R150WT |
Truesemi |
N-Channel MOSFET | |
5 | TSP60R190S1 |
Truesemi |
N-Channel MOSFET | |
6 | TSP60R280S1 |
Truesemi |
N-Channel MOSFET | |
7 | TSP60R2K3S1 |
Truesemi |
N-Channel MOSFET | |
8 | TSP60R380S1 |
Truesemi |
N-Channel MOSFET | |
9 | TSP60R460S1 |
Truesemi |
N-Channel MOSFET | |
10 | TSP60R650S1 |
Truesemi |
N-Channel MOSFET | |
11 | TSP60R850S1 |
Truesemi |
N-Channel MOSFET | |
12 | TSP640 |
Truesemi |
200V N-Channel MOSFET |