TSP630M Truesemi N-Channel MOSFET Datasheet, en stock, prix

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TSP630M

Truesemi
TSP630M
TSP630M TSP630M
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Part Number TSP630M
Manufacturer Truesemi
Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching...
Features
• 9.5A,200V,Max.RDS(on)=0.40 Ω @ VGS =10V
• Low gate charge(typical 20nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (N...

Document Datasheet TSP630M Data Sheet
PDF 340.49KB
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