Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
• 650V @TJ = 150 ℃
• Max. RDS(on) = 0.15Ω
• Ultra Low gate charge (typ. Qg = 41nC)
• 100% avalanche tested
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃)
600
22.0 13.9
IDM Drain Current
– Pulsed
(Note 1)
60
VGSS Gate-Source voltage
±30
EAS PD TJ, TSTG
TL
Singl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSP60R190S1 |
Truesemi |
N-Channel MOSFET | |
2 | TSP60R280S1 |
Truesemi |
N-Channel MOSFET | |
3 | TSP60R2K3S1 |
Truesemi |
N-Channel MOSFET | |
4 | TSP60R380S1 |
Truesemi |
N-Channel MOSFET | |
5 | TSP60R460S1 |
Truesemi |
N-Channel MOSFET | |
6 | TSP60R650S1 |
Truesemi |
N-Channel MOSFET | |
7 | TSP60R850S1 |
Truesemi |
N-Channel MOSFET | |
8 | TSP600-124 |
TRACO POWER |
Industrial Power Supplies | |
9 | TSP600-136 |
TRACO POWER |
Industrial Power Supplies | |
10 | TSP600-148 |
TRACO POWER |
Industrial Power Supplies | |
11 | TSP630M |
Truesemi |
N-Channel MOSFET | |
12 | TSP640 |
Truesemi |
200V N-Channel MOSFET |