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Version: B1811 TSM240N03CX 30V N-Channel Power MOSFET Electrical Specifications (TC = 25°C unless otherwise noted) Parameter Conditions Symbol Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage VGS = 0V, ID = 250µA VGS = 10V, ID = 6A VGS = 4.5V, ID = 4A VDS = VGS, ID = 250µA BVDSS RDS(on) VGS(TH) VDS = 30V, VGS = 0V Zero Gate Voltage Drain Current IDSS VDS = 24V, TJ = 125°C Gate Body Leakage VGS = ±20V, VDS = 0V IGSS Forward Transconductance (Note 3) VDS = 10V, ID = 4A gfs Dynamic Total Gate Charge (Note 3,4) Gate-Source Charge (N.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TSM240N03CX6 |
Taiwan Semiconductor |
N-Channel Power MOSFET |
|
| 2 | TSM2405D |
TRACO |
DC/DC Converters |
|
| 3 | TSM2405S |
TRACO |
DC/DC Converters |
|
| 4 | TSM2409S |
TRACO |
DC/DC Converters |
|
| 5 | TSM2412D |
TRACO |
DC/DC Converters |
|
| 6 | TSM2412S |
TRACO |
DC/DC Converters |
|
| 7 | TSM2415D |
TRACO |
DC/DC Converters |
|
| 8 | TSM2415S |
TRACO |
DC/DC Converters |
|
| 9 | TSM2416 |
THREE-FIVE SYSTEMS |
Alphanumeric Integrated Display |
|
| 10 | TSM200 |
SPSEMI |
Surface Mount Devices |
|
| 11 | TSM200N03D |
Taiwan Semiconductor |
Dual N-Channel MOSFET |
|
| 12 | TSM20N50 |
Taiwan Semiconductor |
500V N-Channel Power MOSFET |
|