TSM160P02 - Taiwan Semiconductor

TSM160P02 P-Channel Power MOSFET

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Features

● Improved dV/dt capability
● Fast Switching
● Suitable for 1.8V drive applications
● Pb-free plating
● RoHS compliant
● Halogen-free mold compound APPLICATION
● Load Switch
● Networking KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS VGS = -4.5V RDS(on) (max) VGS = -2.5V VGS = -1.8V Qg -20 16 22 28 27 V mΩ nC SOP-8 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±10 Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2).