TSM100N06 - Taiwan Semiconductor

TSM100N06 60V N-Channel Power MOSFET

TO-220 Pin Definition: 1. Gate 2. Drain 3. Source TSM100N06 60V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 60 6.7 @ VGS =10V ID (A) 100 Features ● Advanced Trench Technology ● Low RDS(ON) 6.7mΩ (Max.) ● Low gate charge typical @ 81nC (Typ.) ● Low Crss typical @ 339pF (Typ.) Ordering Information Part No. TSM100N06CZ C0G Package TO-.

Features

● Advanced Trench Technology
● Low RDS(ON) 6.7mΩ (Max.)
● Low gate charge typical @ 81nC (Typ.)
● Low Crss typical @ 339pF (Typ.) Ordering Information Part No. TSM100N06CZ C0G Package TO-220 Packing 50pcs / Tube Note: “G” denote for Halogen Free Product Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed Note 1 Avalanche Current, L=0.1mH Avalanche Energy, L=0.1mH Maximum Power Dissipation TC=25°C TC=70°C TA=25°C TA=70°C TC=25°C TC=70°C TA=25.