TSM160N10 - Taiwan Semiconductor

TSM160N10 100V N-Channel Power MOSFET

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Features

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● Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 260pF (Typ.) Block Diagram Ordering Information Part No. TSM160N10CZ C0 Package TO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous Drain Current TC=70°C TA=25°C TA=70°C Drain Current-Pulsed Note 1 Avalanche Current, L=0.5mH Avalanche Energy, L=0.5mH TC=25°C Maximum Power Dissipation TC=70°C TA=25°C TA=70°C Storage Temperature Range Operating Junction .