Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supp.
- 12A, 650V, RDS(on) = 0.75Ω@VGS = 10 V - Low gate charge ( typical 52 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TSB12N60M |
Truesemi |
N-Channel MOSFET |
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| 2 | TSB12N10A |
Unigroup |
100V N-Channel DTMOS |
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| 3 | TSB12LV01B |
ETCTI |
TSB12LV01B IEEE 1394-1995 High-Speed Serial-Link-Layer Controller |
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| 4 | TSB12LV01B-EP |
ETCTI |
IEEE 1394-1995 High-Speed Serial-Bus Link-Layer Controller |
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| 5 | TSB12LV21B |
ETCTI |
IEEE 1394 Link Layer Controller |
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| 6 | TSB12LV21B-EP |
ETCTI |
IEEE 1394 Link Layer Controller |
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| 7 | TSB12LV21BI |
ETCTI |
IEEE 1394 Link Layer Controller |
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| 8 | TSB12LV21BM |
ETCTI |
IEEE 1394 Link Layer Controller |
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| 9 | TSB12LV26 |
ETCTI |
TSB12LV26 TSB12LV26I OHCI-Lynx PCI-Based IEEE 1394 Host Controller |
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| 10 | TSB12LV26-EP |
ETCTI |
TSB12LV26-EP: OHCI-Lynx PCI-Based IEEE 1394 Host Controller (Rev. B) |
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| 11 | TSB12LV26I |
ETCTI |
TSB12LV26 TSB12LV26I OHCI-Lynx PCI-Based IEEE 1394 Host Controller |
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| 12 | TSB12LV32-EP |
ETCTI |
IEEE 1394-1995 and P1392A Compliant General-Purpose Link Layer Controller (Rev. B) |
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