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TSB12N65M |
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| Part Number | TSB12N65M |
| Manufacturer | Truesemi |
| Description | This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchin... |
| Features |
- 12A, 650V, RDS(on) = 0.75Ω@VGS = 10 V - Low gate charge ( typical 52 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D D
D2-PAK GS
GDS
I2-PAK
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
(Note 1)
Gate-Source Voltage
... |
| Document |
 TSB12N65M Data Sheet
PDF 302.69KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TSB12N60M |
Truesemi |
N-Channel MOSFET |
|
| 2 | TSB12N10A |
Unigroup |
100V N-Channel DTMOS |
|
| 3 | TSB12LV01B |
ETCTI |
TSB12LV01B IEEE 1394-1995 High-Speed Serial-Link-Layer Controller |
|
| 4 | TSB12LV01B-EP |
ETCTI |
IEEE 1394-1995 High-Speed Serial-Bus Link-Layer Controller |
|
| 5 | TSB12LV21B |
ETCTI |
IEEE 1394 Link Layer Controller |
|