This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supp.
- 12A, 600V, RDS(on) = 0.7Ω@VGS = 10 V - Low gate charge ( typical 52 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSB12N65M |
Truesemi |
N-Channel MOSFET | |
2 | TSB12N10A |
Unigroup |
100V N-Channel DTMOS | |
3 | TSB12LV01B |
ETCTI |
TSB12LV01B IEEE 1394-1995 High-Speed Serial-Link-Layer Controller | |
4 | TSB12LV01B-EP |
ETCTI |
IEEE 1394-1995 High-Speed Serial-Bus Link-Layer Controller | |
5 | TSB12LV21B |
ETCTI |
IEEE 1394 Link Layer Controller | |
6 | TSB12LV21B-EP |
ETCTI |
IEEE 1394 Link Layer Controller | |
7 | TSB12LV21BI |
ETCTI |
IEEE 1394 Link Layer Controller | |
8 | TSB12LV21BM |
ETCTI |
IEEE 1394 Link Layer Controller | |
9 | TSB12LV26 |
ETCTI |
TSB12LV26 TSB12LV26I OHCI-Lynx PCI-Based IEEE 1394 Host Controller | |
10 | TSB12LV26-EP |
ETCTI |
TSB12LV26-EP: OHCI-Lynx PCI-Based IEEE 1394 Host Controller (Rev. B) | |
11 | TSB12LV26I |
ETCTI |
TSB12LV26 TSB12LV26I OHCI-Lynx PCI-Based IEEE 1394 Host Controller | |
12 | TSB12LV32-EP |
ETCTI |
IEEE 1394-1995 and P1392A Compliant General-Purpose Link Layer Controller (Rev. B) |