Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supp.
- 10A, 650V, RDS(on) = 0.95Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TSB10N60M |
Truesemi |
N-Channel MOSFET |
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| 2 | TSB10N60S |
Truesemi |
N-Channel MOSFET |
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| 3 | TSB1132 |
Taiwan Semiconductor Company |
Low Frequency PNP Transistor |
|
| 4 | TSB1184 |
Taiwan Semiconductor |
Low Vce(sat) PNP Transistor |
|
| 5 | TSB1184A |
Taiwan Semiconductor Company |
Low Vce(sat) PNP Transistor |
|
| 6 | TSB11N60S |
Truesemi |
N-Channel MOSFET |
|
| 7 | TSB12LV01B |
ETCTI |
TSB12LV01B IEEE 1394-1995 High-Speed Serial-Link-Layer Controller |
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| 8 | TSB12LV01B-EP |
ETCTI |
IEEE 1394-1995 High-Speed Serial-Bus Link-Layer Controller |
|
| 9 | TSB12LV21B |
ETCTI |
IEEE 1394 Link Layer Controller |
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| 10 | TSB12LV21B-EP |
ETCTI |
IEEE 1394 Link Layer Controller |
|
| 11 | TSB12LV21BI |
ETCTI |
IEEE 1394 Link Layer Controller |
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| 12 | TSB12LV21BM |
ETCTI |
IEEE 1394 Link Layer Controller |
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