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TSB10N65M |
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| Part Number | TSB10N65M |
| Manufacturer | Truesemi |
| Description | This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switchin... |
| Features |
- 10A, 650V, RDS(on) = 0.95Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D D
D2-PAK GS
GDS
I2-PAK
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS
ID
IDM VGSS EAS IAR EAR dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed
(Note 1)
Gate-Source Voltage
... |
| Document |
 TSB10N65M Data Sheet
PDF 315.01KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | TSB10N60M |
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| 2 | TSB10N60S |
Truesemi |
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Taiwan Semiconductor Company |
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| 5 | TSB1184A |
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