TSB1184 - Taiwan Semiconductor

TSB1184 Low Vce(sat) PNP Transistor

TSB1184 Low Vce(sat) PNP Transistor Pin Assignment: 1. Base 2. Collector 3. Emitter BVCEO = - 50V Ic = - 3A VCE (SAT), = - 0.3V(typ.) @Ic / Ib = - 2A / - 0.1A Features Low VCE (SAT). Excellent DC current gain characteristics Ordering Information Part No. TSB1184CP Packing Tape & Reel Package TO-252 Structure Epitaxial planar type. PNP silicon transistor .

Features

Low VCE (SAT). Excellent DC current gain characteristics Ordering Information Part No. TSB1184CP Packing Tape & Reel Package TO-252 Structure Epitaxial planar type. PNP silicon transistor Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 2mS DC Pulse TO-252 PD TJ TSTG Symbol VCBO VCEO VEBO IC Limit - 50V - 50V -6 -3 - 7 (note 1) 1.0 +150 - 55 to +15.