TPS1110Y - Texas Instruments

TPS1110Y SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS

The TPS1110 is a single, low-rDS(on), P-channel enhancement-mode power MOS transistor. The device features extremely low-rDS(on) values coupled with logic-level gate-drive capability and very low drain-source leakage current. With a maximum VGS(th) of – 0.9 V and an IDSS of only –100 nA, the TPS1110 is the ideal high-side switch for low-voltage, portable bat.

Features

extremely low-rDS(on) values coupled with logic-level gate-drive capability and very low drain-source leakage current. With a maximum VGS(th) of
  – 0.9 V and an IDSS of only
  –100 nA, the TPS1110 is the ideal high-side switch for low-voltage, portable battery-management power-distribution systems where maximizing battery life is an important concern. The thermal performance of the 8-pin small-outline (D) package has been greatly enhanced over the standard 8-pin SOIC, further making the TPS1110 ideally suited for many power applications. For compatibility with existing designs, the TPS1110 has a .