TPS1110Y |
Part Number | TPS1110Y |
Manufacturer | Texas Instruments (https://www.ti.com/) |
Description | The TPS1110 is a single, low-rDS(on), P-channel enhancement-mode power MOS transistor. The device features extremely low-rDS(on) values coupled with logic-level gate-drive capability and very low drai... |
Features |
extremely low-rDS(on) values coupled with logic-level gate-drive capability and very low drain-source leakage current. With a maximum VGS(th) of – 0.9 V and an IDSS of only –100 nA, the TPS1110 is the ideal high-side switch for low-voltage, portable battery-management power-distribution systems where maximizing battery life is an important concern. The thermal performance of the 8-pin small-outline (D) package has been greatly enhanced over the standard 8-pin SOIC, further making the TPS1110 ideally suited for many power applications. For compatibility with existing designs, the TPS1110 has a ... |
Document |
TPS1110Y Data Sheet
PDF 223.07KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | TPS1110 |
Texas Instruments |
SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS | |
2 | TPS1100 |
Texas Instruments |
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS | |
3 | TPS1100Y |
Texas Instruments |
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS | |
4 | TPS1101 |
Texas Instruments |
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS | |
5 | TPS1101Y |
Texas Instruments |
SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS |