TPS1120Y - Texas Instruments

TPS1120Y DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

The TPS1120 incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOS™ process, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th) of – 1.5 V and an IDSS of only 0.5 µA, the TPS1120 is the ideal high-side switch for low-voltage portable battery-manag.

Features

for the TPS1120 includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in small-outline integrated circuit SOIC packages. The TPS1120 is characterized for an operating junction temperature range, TJ, from
  – 40°C to 150°C. AVAILABLE OPTIONS PACKAGED DEVICES† CHIP FORM TJ SMALL OUTLINE (Y) (D)
  – 40°C to 150°C TPS1120D TPS1120Y † The D package is available taped and reeled. Add an R suffix to device type (e.g., TPS1120DR). The chip for.