TMS416800 - Texas Instruments

TMS416800 HIGH-SPEED DRAMS

The TMS41x800 series is a set of high-speed, 16 777 216-bit dynamic random-access memories (DRAMs) organized as 2 097 152 words of eight bits each. It employs TI’s state-of-the-art EPIC technology for high performance, reliability, and low power. These devices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines are la.

Features

ices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines are latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility. The TMS416800 and TMS417800 are offered in a 28-lead plastic surface-mount SOJ package (DZ suffix). This package is characterized for operation from 0°C to 70°C. SMKS883A
  – OCTOBER 1995
  – REVISED MARCH 1996 DZ PACKAGE ( TOP VIEW ) VCC DQ0 DQ1 DQ2 DQ3 W RAS A11† A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 VSS 27 DQ7 26 DQ6 25 DQ5 24 DQ4 23 CAS 22 OE 21 A9 20 A8 19 A7 18 A6 17 A5.