The TMS4xx400 is a set of high-speed, 16 777 216-bit dynamic random-access memories organized as 4 194 304 words of 4 bits each. The TMS4xx400P series are high-speed, low-power, self-refresh, 16 777 216-bit dynamic randomaccess memories organized as 4 194 304 words of 4 bits each. The TMS4xx400 and TMS4xx400P employ state-of-the-art EPIC™ (Enhanced Performan.
e and 24 / 26-Lead
Surface-Mount Thin Small-Outline Package
( TSOP)
D Operating Free-Air Temperature Range:
0°C to 70°C
D EPIC™ (Enhanced Performance Implanted
CMOS) Technology
DJ PACKAGE ( TOP VIEW )
DGA PACKAGE ( TOP VIEW )
VCC DQ1
DQ2
W
RAS A11†
1 2 3 4 5 6
26 VSS VCC 1 25 DQ4 DQ1 2
24 DQ3 DQ2 3
23 CAS
W4
22 OE RAS 5
21 A9 A11† 6
26 VSS 25 DQ4 24 DQ3 23 CAS 22 OE
21 A9
A10 A0 A1 A2 A3
VCC
8 9 10 11 12 13
19 A8
A10 8
18 A7
A0 9
17 A6
A1 10
16 A5
A2 11
15 A4
A3 12
14 VSS VCC 13
19 A8 18 A7 17 A6 16 A5 15 A4 14 VSS
PIN NOMENCLATURE
A0
– A11† CAS DQ1
– DQ4 OE NC RAS V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TMS416400 |
Texas Instruments |
4194304-WORD BY 4-BIT HIGH-SPEED DRAMS | |
2 | TMS416400A |
Texas Instruments |
DYNAMIC RANDOM-ACCESS MEMORIES | |
3 | TMS416409A |
National Semiconductor |
4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES | |
4 | TMS416409A |
Texas Instruments |
DYNAMIC RANDOM-ACCESS MEMORIES | |
5 | TMS416100 |
Texas Instruments |
DYNAMIC RANDOM-ACCESS MEMORIES | |
6 | TMS416100P |
Texas Instruments |
DYNAMIC RANDOM-ACCESS MEMORIES | |
7 | TMS416160 |
Texas Instruments |
1048576-WORD BY 16-BIT HIGH-SPEED DRAMS | |
8 | TMS416160P |
Texas Instruments |
1048576-WORD BY 16-BIT HIGH-SPEED DRAMS | |
9 | TMS416169 |
Texas Instruments |
1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS | |
10 | TMS416800 |
Texas Instruments |
HIGH-SPEED DRAMS | |
11 | TMS416809 |
Texas Instruments |
HIGH-SPEED DRAMS | |
12 | TMS4116 |
Texas Instruments Inc |
16384-Bin Dynamic Random-Access Memory |