TK380P65Y - Toshiba

TK380P65Y Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (DTMOS) TK380P65Y TK380P65Y 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.29 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.36 mA) 3. Packaging and Internal Circuit 1: G.

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.29 Ω (typ.) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.36 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source DPAK 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Tc = 25 ) (Note 1) ID 9.7 A Drain current (DC) (Tc = 100 ) (Note 1) ID 6.1 A Drain current (pulsed) (Tc = 25 ) (Not.