MOSFETs Silicon N-channel MOS (U-MOS) TK18E10K3 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ.) (2) High forward transfer admittance: |Yfs| = 28 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging.
(1) Low drain-source on-resistance: RDS(ON) = 33 mΩ (typ.) (2) High forward transfer admittance: |Yfs| = 28 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK18E10K3 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Drain-gate voltage (RGS = 20 kΩ) VDGR 100 Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 18 A .
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK18E10K3,ITK18E10K3 ·FEATURES ·Low drain-source on-resistance:.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK18 |
Dynex Semiconductor |
Phase Control Thyristor | |
2 | TK18 |
ene |
Capacitive Touch Key Flash MCU | |
3 | TK18.5A |
Topstek |
Current Transducer | |
4 | TK1810MK |
Dynex Semiconductor |
Phase Control Thyristor | |
5 | TK1812MK |
Dynex Semiconductor |
Phase Control Thyristor | |
6 | TK18A30D |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
7 | TK18A30D |
INCHANGE |
N-Channel MOSFET | |
8 | TK18A50D |
Toshiba |
Silicon N-Channel MOSFET | |
9 | TK18A50D |
INCHANGE |
N-Channel MOSFET | |
10 | TK100A06N1 |
Toshiba Semiconductor |
MOSFETs | |
11 | TK100A06N1 |
INCHANGE |
N-Channel MOSFET | |
12 | TK100A08N1 |
Toshiba Semiconductor |
MOSFETs |