TK18 TK18 Phase Control Thyristor Advance Information Replaces January 2000 version, DS45253-4.0 DS4253-5.0 July 2001 FEATURES s High Surge Capability KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 1200V 115A 2000A 200V/µs 500A/µs APPLICATIONS s High Power Drives s High Voltage Power Supplies s DC Motor Control s Welding s Battery Chargers *Higher dV/dt se.
s High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dVdt
* dI/dt 1200V 115A 2000A 200V/µs 500A/µs
APPLICATIONS
s High Power Drives s High Voltage Power Supplies s DC Motor Control s Welding s Battery Chargers
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM V 1200 1000 Conditions
TK18 12 M or K TK18 10 M or K
Tvj = 0˚ to 125˚C, IDRM = IRRM = 100mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Outline type code: TO94. See Package Details for further information. Fig. 1 Package outline
Lower voltage grades availabl.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK1812MK |
Dynex Semiconductor |
Phase Control Thyristor | |
2 | TK18 |
Dynex Semiconductor |
Phase Control Thyristor | |
3 | TK18 |
ene |
Capacitive Touch Key Flash MCU | |
4 | TK18.5A |
Topstek |
Current Transducer | |
5 | TK18A30D |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
6 | TK18A30D |
INCHANGE |
N-Channel MOSFET | |
7 | TK18A50D |
Toshiba |
Silicon N-Channel MOSFET | |
8 | TK18A50D |
INCHANGE |
N-Channel MOSFET | |
9 | TK18E10K3 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
10 | TK18E10K3 |
INCHANGE |
N-Channel MOSFET | |
11 | TK100A06N1 |
Toshiba Semiconductor |
MOSFETs | |
12 | TK100A06N1 |
INCHANGE |
N-Channel MOSFET |