TK12 TK12 Phase Control Thyristor Advance Information Replaces January 2000 version, DS4252-4.0 DS4252-5.0 July 2001 FEATURES s High Surge Capability KEY PARAMETERS VDRM IT(AV) ITSM dVdt* dI/dt 2000V 75A 1400A 200V/µs 500A/µs APPLICATIONS s High Power Drives s High Voltage Power Supplies s DC Motor Control s Welding s Battery Chargers *Higher dV/dt sele.
s High Surge Capability
KEY PARAMETERS VDRM IT(AV) ITSM dVdt
* dI/dt 2000V 75A 1400A 200V/µs 500A/µs
APPLICATIONS
s High Power Drives s High Voltage Power Supplies s DC Motor Control s Welding s Battery Chargers
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM V 2000 1800 1600 1400 Conditions
TK12 20 M or K TK12 18 M or K TK12 16 M or K TK12 14 M or K
Tvj = 0˚ to 125˚C, IDRM = IRRM = 100mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V Respectively Outline type code: TO94. See Package Details for further information. Fig. 1 Package.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK100A06N1 |
Toshiba Semiconductor |
MOSFETs | |
2 | TK100A06N1 |
INCHANGE |
N-Channel MOSFET | |
3 | TK100A08N1 |
Toshiba Semiconductor |
MOSFETs | |
4 | TK100A10N1 |
Toshiba |
Silicon N-Channel MOSFET | |
5 | TK100A10N1 |
INCHANGE |
N-Channel MOSFET | |
6 | TK100E06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
7 | TK100E06N1 |
INCHANGE |
N-Channel MOSFET | |
8 | TK100E08N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
9 | TK100E08N1 |
INCHANGE |
N-Channel MOSFET | |
10 | TK100E10N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
11 | TK100E10N1 |
INCHANGE |
N-Channel MOSFET | |
12 | TK100F04K3 |
Toshiba |
Silicon N-Channel MOSFET |