·Continuous Collector Current-IC= -5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Collector Power Dissipation- : PC= 20W @TC≤ 100℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and high speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL .
rk isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2.5A; IB= -0.25A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(on) Base-Emitter On Voltage IC= -5A; VCE= -4V ICEO Collector Cutoff Current VCE= -75V; IB= 0 ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain VCB= -150V; IE= 0 VEB= -2.5V; IC= 0 VEB= -5V; IC= 0 IC= -2.5A; VCE= -4V hFE-2 .
·With TO-66 package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For use in high-frequen.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TIP51 |
Mospec Semiconductor |
High-Voltage NPN Silicon Power Transistor | |
2 | TIP51 |
INCHANGE |
NPN Transistor | |
3 | TIP513 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
4 | TIP50 |
RECTRON |
Power Transistors | |
5 | TIP50 |
Fairchild Semiconductor |
NPN Silicon Transistor | |
6 | TIP50 |
STMicroelectronics |
SILICON NPN SWITCHING TRANSISTORS | |
7 | TIP50 |
Motorola |
POWER TRANSISTORS | |
8 | TIP50 |
ON Semiconductor |
High Voltage NPN Silicon Power Transistors | |
9 | TIP50 |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS | |
10 | TIP50 |
CDIL |
NPN PLASTIC POWER TRANSISTORS | |
11 | TIP50 |
INCHANGE |
NPN Transistor | |
12 | TIP50 |
Multicomp |
High Voltage Power Trasnsitors |