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·Continuous Collector Current-IC= -5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Collector Power Dissipation- : PC= 30W @TC≤ 100℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and high speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL .
ademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2.5A; IB= -0.25A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(on) Base-Emitter On Voltage IC= -5A; VCE= -4V ICEO Collector Cutoff Current VCE= -75V; IB= 0 ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain VCB= -150V; IE= 0 VEB= -2.5V; IC= 0 VEB= -5V; IC= 0 IC= -2.5A; VCE= -4V h.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TIP51 |
Mospec Semiconductor |
High-Voltage NPN Silicon Power Transistor |
|
| 2 | TIP51 |
INCHANGE |
NPN Transistor |
|
| 3 | TIP514 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | TIP514 |
INCHANGE |
PNP Transistor |
|
| 5 | TIP50 |
RECTRON |
Power Transistors |
|
| 6 | TIP50 |
Fairchild Semiconductor |
NPN Silicon Transistor |
|
| 7 | TIP50 |
STMicroelectronics |
SILICON NPN SWITCHING TRANSISTORS |
|
| 8 | TIP50 |
Motorola |
POWER TRANSISTORS |
|
| 9 | TIP50 |
ON Semiconductor |
High Voltage NPN Silicon Power Transistors |
|
| 10 | TIP50 |
Power Innovations Limited |
NPN SILICON POWER TRANSISTORS |
|
| 11 | TIP50 |
CDIL |
NPN PLASTIC POWER TRANSISTORS |
|
| 12 | TIP50 |
INCHANGE |
NPN Transistor |
|