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TIP51 NPN Transistor

·DC Current Gain -hFE = 30~150@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier,and switching power supply drivers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALU.

Features

TICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 10V ICBO Collector Cutoff Current VCB= 350V; IE= 0 ICEO Collector Cutoff Current VCE= 150V; IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.3A; VCE= 10V hFE-2 DC Current Gain IC= 3A; VCE= 10V fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V TIP51 MIN MAX UNIT 250 V 1.5 V 1.5 V 1.0 mA 1.0 mA .

The same part from a different manufacturer

Datasheet TIP51 - Mospec Semiconductor TIP51

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