TIM1414-10A - Toshiba

TIM1414-10A Microwave Power GAAS Fet

www.DataSheet4U.com TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features • High power - P1dB =40.5 dBm at 14.0 GHz to14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz • Broad Band Internally Matched • Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Output Power at 1dB Comp.

Features

• High power - P1dB =40.5 dBm at 14.0 GHz to14.5 GHz
• High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz
• Broad Band Internally Matched
• Hermetically sealed package RF Performance Specifications (Ta = 25° C) Characteristics Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Power Added Efficiency Channel-Temperature Rise Symbol P1dB G1dB IDS ηadd ∆Tch VDS X IDS X Rth(c-c) VDS = 9V f = 14.0 ~ 14.5GHz Condition Unit dBm dB A % °C Min. 40.0 5.0
  –
  –
  – Typ. 40.5 6.0 4.0 23
  – Max
  –
  – 5.0
  – 90 TIM1414-10A DataShee Electrical Characteristics (Ta = 25° C) Charact.